APTC80A10SCT datasheet

Маркировка

APTC80A10SCT
Производитель

Microsemi Corporation
Описание

Microsemi Corporation APTC80A10SCT Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: UNSPECIFIED Terminal Position: UPPER Number of Terminals: 10 Package Body Material: UNSPECIFIED Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Case Connection: ISOLATED Number of Elements: 2 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 43 A DS Breakdown Voltage-Min: 800 V Avalanche Energy Rating (Eas): 670 mJ Drain-source On Resistance-Max: 0.1000 ohm Pulsed Drain Current-Max (IDM): 172 A
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7 шт.
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